Plasma-implanted Ti-doped hematite photoanodes with enhanced photoelectrochemical water oxidation performance

Peng, Yong, Ruan, Qingdong, Lam, Chun Ho, Meng, Fanxu, Guan, Chung-Yu, Santoso, Shella Permatasari, Zhou, Xingli, Yu, Edward T., Chu, Paul K. and Hsu, Hsien-Yi (2021) Plasma-implanted Ti-doped hematite photoanodes with enhanced photoelectrochemical water oxidation performance. Plasma-implanted Ti-doped hematite photoanodes with enhanced photoelectrochemical water oxidation performance, 870 (25). p. 159376. ISSN 09258388, Jurnal Internasional Bereputasi SJR(2020): 1.11, Q1, H-Index: 172

	Text (Plasma-implanted Ti-doped hematite photoanodes with enhanced photoelectrochemical water oxidation performance) 34- Plasma-implanted_Ti-doped_hematite_.pdf Download (5MB)
	Text (Plasma-implanted Ti-doped hematite photoanodes with enhanced photoelectrochemical water oxidation performance_peer_review_) 34-R1&2-Plasma_implanted_Ti_doped_hematite_.pdf Download (971kB)
	Text (Plasma-implanted Ti-doped hematite photoanodes with enhanced photoelectrochemical water oxidation performance) 34-Plasma-implanted Ti-doped hematite.pdf Download (548kB)

Abstract

Hematite (α-Fe2O3) is recognized as a promising photoelectrode material for photoelectrochemical (PEC) water splitting, as a result of its abundance, non-toxicity, suitable bandgap, and photochemical stability. Nevertheless, the undesirable physical and photophysical behaviors, such as poor conductivity, short diffusion length, and rapid charge-carrier recombination, seriously restrict PEC water splitting efficiency of hematite semiconductors. Herein, we fabricate nanoporous titanium (Ti)-doped α-Fe2O3 thin films by a facile hydrothermal reaction, subsequently utilizing energetic plasma ion implantation with a post-annealing process to significantly enhance the photoelectrochemical water oxidation performance of hematite. On the basis of materials characterization and electrochemical analysis, the optimized Ti-doped Fe2O3, i.e., Ti-4-Fe2O3, exhibits improved photocurrents of 0.55 and 1.07 mA cm−2 at 1.23 and 1.5 V versus RHE respectively under illumination of 100 mW/cm2 with AM 1.5 G spectrum, showing approximately 1.6-fold increases compared to pristine Fe2O3. We attribute this increase to improved charge carrier transport induced by Ti doping that reduces the recombination of light-driven charge carriers. The work utilizing plasma-assisted doping technique provides new insights into the surface engineering of photo-responsive semiconductors for the development of emerging hydrogen technologies

Item Type:	Article
Additional Information:	Jurnal Internasional Bereputasi SJR(2020): 1.11, Q1, H-Index: 172
Uncontrolled Keywords:	Hematite Photoelectrochemistry Surface engineering Plasma ion implantation
Subjects:	Engineering > Chemical Engineering
Divisions:	Journal Publication
Depositing User:	F.X. Hadi
Date Deposited:	13 Jul 2022 04:29
Last Modified:	02 Aug 2022 07:13
URI:	http://repository.ukwms.ac.id/id/eprint/31434

Actions (login required)

View Item